Staebler-Wronski effect in hydrogenated amorphous silicon

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 218, Issue 1-2, 1996, Pages 85-90

  Prasad, Rajendra ^a,c   Shenoy, Subodh R ^b,c  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

^b UNIVERSITY OF HYDERABAD   (India)

^c ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; HYDROGEN BONDS; HYDROGENATION;

H DIFFUSION; HYDROGEN ATOMS; SI-SI BONDS; STAEBLER-WRONSKI EFFECT; STRETCHED EXPONENTIAL; TEMPERATURE DEPENDENT;

AMORPHOUS SILICON;

EID: 0042091957     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/0375-9601(96)00389-1     Document Type: Article

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