A comparison of cathodoluminescence and photoluminescence of porous silicon and the influence of aging and electron irradiation of these properties

Solid State Communications

Volumn 143, Issue 4-5, 2007, Pages 197-201

  Zhao, Yue ^a,b   Li, Dongsheng ^b   Xing, Shuoxiang ^c   Sang, Wenbin ^a   Yang, Deren ^b   Jiang, Minhua ^b,d  

^a SHANGHAI UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c ZHEJIANG UNIVERSITY   (China)

^d SHANDONG UNIVERSITY   (China)

Author keywords

A. Porous silicon; E. Cathodoluminescence; E. Photoluminescence

Indexed keywords

AGING OF MATERIALS; CATHODOLUMINESCENCE; ELECTRON IRRADIATION; ETCHING; PHOTOLUMINESCENCE; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY;

ELECTRON BEAM EXPOSURE; ELECTRON-BEAM RADIATION; HYDROGEN-ATOM DESORPTION; SURFACE OXIDIZED LAYER;

POROUS SILICON;

EID: 34250859427     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.05.030     Document Type: Article

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