TEM characterisation of porous silicon

Micron

Volumn 31, Issue 3, 2000, Pages 223-230

  Parisini, A ^a   Angelucci, R ^a   Dori, L ^a   Poggi, A ^a   Maccagnani, P ^a   Cardinali, G C ^a   Amato, G ^b   Lerondel, G ^b   Midellino, D ^b  

^a CNR   (Italy)

^b ISTITUTO ELETTROTECNICO NAZIONALE GALILEO FERRARIS   (Italy)

Author keywords

Gas sensor devices; Macropores; Photoluminescence; Porous silicon; Porous silicon superlattices; Transmission electron microscopy

Indexed keywords

EID: 0034089163     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0968-4328(99)00087-6     Document Type: Article

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