Photoluminescence in the earliest stages of porous silicon formation

Journal of the Electrochemical Society

Volumn 143, Issue 8, 1996, Pages

  Dudel, Frank P ^a   Rieger, Melissa M ^b,c   Pickering, Jason P ^a,c   Gole, James L ^a   Kohl, Paul A ^b,c   Bottomley, Lawrence A ^a,c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DOPING (ADDITIVES); ELECTRIC CONTACTS; ELECTROCHEMISTRY; IN SITU PROCESSING; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SURFACE STRUCTURE;

ELECTROCHEMICAL ETCHING; HIGH RESOLUTION SCANNING ELECTRON MICROSCOPY; OXYHYDRIDES; QUANTUM CONFINEMENT; SCANNING FORCE MICROSCOPY; SURFACE TOPOGRAPHY;

ETCHING;

EID: 0030212636     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837016     Document Type: Article

References (6)

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5. M. M. Rieger and P. A. Kohl, This Journal, 142, 1490 (1995).
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