First-principles investigation of strain effects on the energy gaps in silicon nanoclusters

Journal of Physics Condensed Matter

Volumn 19, Issue 26, 2007, Pages

  Peng, X H ^a,b   Alizadeh, A ^a   Bhate, N ^a   Varanasi, K K ^a   Kumar, S K ^c   Nayak, S K ^b  

^a GE GLOBAL RESEARCH   (United States)

^b Rensselaer Polytechnic Institute   (United States)

^c Fu Foundation School of Engineering and Applied Science   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; ENERGY GAP; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SILICON COMPOUNDS; STRAIN ENERGY;

FIRST-PRINCIPLES INVESTIGATION; SILICON NANOCLUSTERS;

NANOCLUSTERS;

EID: 34250791298     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/26/266212     Document Type: Article

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