Microstructure and ferroelectric properties of dysprosium-doped bismuth titanate thin films

Materials Letters

Volumn 61, Issue 19-20, 2007, Pages 4117-4120

  Cheng, Chuanpin ^a   Tang, Minghua ^a   Ye, Zhi ^a   Zhou, Yichun ^a   Zheng, Xuejun ^a   Hu, Zenshun ^a   Hu, Heping ^a  

^a XIANGTAN UNIVERSITY   (China)

Author keywords

Ferroelectric thin films; Sol gel; Substitution

Indexed keywords

ANNEALING; DYSPROSIUM; FERROELECTRICITY; MICROSTRUCTURE; RANDOM ACCESS STORAGE; REMANENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BISMUTH COMPOUNDS; SOL-GEL PROCESS; SUBSTITUTION REACTIONS;

DEPOSITED THIN FILMS; FATIGUE FREE CHARACTERISTICS; POLYCRYSTALLITES;

FERROELECTRIC THIN FILMS;

EID: 34250767117     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2007.01.033     Document Type: Article

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