Effect of cerium concentration on the structural and ferroelectric properties of Bi4-x Cex Ti3O12 thin films for ferroelectric random access memories

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1029-1031

  Oh, Young Nam ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CERIUM; FERROELECTRICITY; LEAKAGE CURRENTS; POLARIZATION; PULSED LASER DEPOSITION; RANDOM ACCESS STORAGE;

FERROELECTRIC PROPERTIES; LAYERED STRUCTURE; POLARIZATION FATIGUE; SWITCHING CYCLES;

THIN FILMS;

EID: 31144440791     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1926288     Document Type: Article

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