Modeling the effect of source/drain junction depth on bulk-MOSFET scaling

Solid-State Electronics

Volumn 51, Issue 6, 2007, Pages 823-827

  Murali, Raghunath ^a   Meindl, James D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

MOSFET; Source drain junction depth; Threshold voltage rolloff

Indexed keywords

EID: 34250705710     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.03.012     Document Type: Letter

References (16)

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