The influence of source and drain junction depth on the short-channel effect in MOSFETs

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2814-2816

  Sleva, Stephen ^a   Taur, Yuan ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

MOSFET scale length; Short channel effect (SCE); Source and drain junction depth

Indexed keywords

BOUNDARY CONDITIONS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; EIGENVALUES AND EIGENFUNCTIONS; FINITE ELEMENT METHOD; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

MOSFET SCALE LENGTH; SHORT CHANNEL EFFECT (SCE);

MOSFET DEVICES;

EID: 29244470866     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859614     Document Type: Article

References (6)

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