RF breakdown and large-signal modeling of AlGaN/GaN HFET's

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 643-646

  Trew, R J ^a   Liu, Y ^a   Kuang, W ^a   Yin, H ^a   Bilbro, G L ^a   Shealy, J B ^b   Vetury, R ^b   Garber, P M ^b   Poulton, M J ^b  

^a North Carolina State University   (United States)

^b RF MICRO DEVICES   (United States)

Author keywords

AlGaN GaN HFET's; HFET Gate leakage; HFET RF breakdown; Large signal model

Indexed keywords

CONDUCTING CHANNELS; LARGE SIGNAL MODELS; RELIABILITY DEGRADATION; TUNNEL LEAKAGE MECHANISMS;

ALUMINUM GALLIUM NITRIDE; BIAS VOLTAGE; ELECTRIC BREAKDOWN; ENERGY GAP; GALLIUM NITRIDE; SEMICONDUCTOR MATERIALS;

FIELD EFFECT TRANSISTORS;

EID: 34250361893     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249696     Document Type: Conference Paper

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