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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 1, 2007, Pages 200-203

Dry etching of N-face GaN using two high-density plasma etch techniques

(7) Rizzi, F a Bejtka, K a,b Semond, F b Gu, E a Dawson, M D a Watson, M a Martin, R W a

a UNIVERSITY OF STRATHCLYDE (United Kingdom)

b CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LASERS; DRY-ETCHING; ELECTRON CYCLOTRON RESONANCE ETCHING; HIGH-DENSITY PLASMA; INDUCTIVELY COUPLED PLASMA (ICP); INTERNATIONAL SYMPOSIUM; PLASMA ETCHED;

CHLORINE COMPOUNDS; CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; MAGNETISM; PHOTORESISTS; PLASMA ETCHING; PLASMAS; SEMICONDUCTING GALLIUM;

INDUCTIVELY COUPLED PLASMA;

EID: 34250206460 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200673515 Document Type: Conference Paper

Times cited : (2)

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