Thermodynamic properties and interfacial layer characteristics of Hf O2 thin films deposited by plasma-enhanced atomic layer deposition

Applied Physics Letters

Volumn 90, Issue 22, 2007, Pages

  Kim, Inhoe ^a   Kuk, Seoungwoo ^a   Kim, Seokhoon ^a   Kim, Jinwoo ^a   Jeon, Hyeongtag ^a   Cho, M H ^b   Chung, K B ^b  

^a Hanyang University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CRYSTALLIZATION; HAFNIUM COMPOUNDS; SILICATES; THERMODYNAMIC PROPERTIES;

INTERFACIAL LAYERS; ION SCATTERING; PHYSICAL REACTIVITY; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION;

THIN FILMS;

EID: 34249905845     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2743749     Document Type: Article

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