Constant-charge-injection programming for 10-MB/s multilevel AG-AND flash memories

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue CIRCUITS SYMP., 2002, Pages 302-303

  Kurata, Hideaki ^a   Saeki, Shunichi ^a   Kobayashi, Takashi ^a   Sasago, Yoshitaka ^a   Kawahara, Takayuki ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRONS; LOGIC CIRCUITS; LOGIC GATES; MOS DEVICES; STORAGE ALLOCATION (COMPUTER); THRESHOLD VOLTAGE; VOLTAGE CONTROL;

CONSTANT-CHARGE-INJECTION PROGRAMMING; FLOATING GATE; INTERNAL POWER SUPPLY; MULTILEVEL ASSIST-GATE-AND FLASH MEMORY;

FLASH MEMORY;

EID: 0242611608     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. H. Nokukata et al., Symp. VLSI Circuits, pp. 39-40, 1999.
2. H. Kurata et al., Symp. VLSI Circuits, pp.166-167, 2000.
3. T. Kobayashi et al., IEDM Dig. Tech. Papers, pp. 29-32, 2001.