Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes

Applied Physics Letters

Volumn 90, Issue 21, 2007, Pages

  Krier, A ^a   Smirnov, V M ^a   Batty, P J ^a   Vasil'Ev, V I ^b   Gagis, G S ^b   Kuchinskii, V I ^b  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ELECTROSTATIC FORCE; ENERGY GAP; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

BAND TAIL STATES; ELECTROSTATIC POTENTIAL; LOCALIZED STATES; ROOM TEMPERATURE;

LIGHT EMITTING DIODES;

EID: 34249669785     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2741147     Document Type: Article

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