High quality AlGaSb, AlGaAsSb and InGaAsSb epitaxial layers grown by liquid-phase epitaxy from Sb-rich melts

IEE Proceedings: Optoelectronics

Volumn 144, Issue 6, 1997, Pages 438-440

  Deryagin, A G ^a   Faleev, N N ^a   Smirnov, V M ^a   Sokolovskii, G S ^a   Vasil'ev, V I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Antimony rich melts; Epitaxial growth; Liquid phase epitaxy; Optoelectronic devices

Indexed keywords

ANTIMONY; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ENERGY GAP; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SOLID SOLUTIONS; SPECTROSCOPIC ANALYSIS;

PHOTOLUMINESCENCE SPECTROSCOPY;

INTEGRATED OPTOELECTRONICS;

EID: 0031359115     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19971456     Document Type: Article

References (6)

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6. VASIL'EV, V.I., DERYAGIN, A.G., KUCHINSKII, V.I., LUNEV, A.V., and SMIRNOV, V.M.: 'Low-threshold lasers based on GaSb/GaInAsSb/AlGaInAsSb double heterostructures prepared by liquid-phase epitaxy from antimony-rich fluxes', Tech. Phys. Lett., 1996, 22, (1), pp. 52-53