Surface reconstructions on Sb-irradiated GaAs(0 0 1) formed by molecular beam epitaxy

Microelectronics Journal

Volumn 38, Issue 4-5, 2007, Pages 620-624

  Kakuda, Naoki ^a,b   Tsukamoto, Shiro ^a   Ishii, Akira ^c   Fujiwara, Katsutoshi ^c   Ebisuzaki, Toshikazu ^d   Yamaguchi, Koichi ^b   Arakawa, Yasuhiko ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^c TOTTORI UNIVERSITY   (Japan)

^d RIKEN   (Japan)

Author keywords

Electron counting rule; First principles calculation; GaAs; Molecular beam epitaxy; Reflection high energy electron diffraction; Sb; Scanning tunneling microscopy; Surface reconstruction

Indexed keywords

DIMERS; HIGH ENERGY ELECTRON DIFFRACTION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SURFACE RECONSTRUCTION;

ELECTRON COUNTING RULES; FIRST-PRINCIPLES CALCULATION; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34249278761     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.02.001     Document Type: Article

References (22)

1. Miura T., Nakai T., and Yamaguchi K. Appl. Surf. Sci. 237 (2004) 242
2. Yamaguchi K., and Kanto T. J. Cryst. Growth 275 (2005) e2269
3. Ohta M., Kanto T., and Yamaguchi K. Jpn. J. Appl. Phys. 45 (2006) 3427
4. Whitman L.J., Bennett B.R., Kneedler E.M., Jonker B.T., and Shanabrook B.V. Surf. Sci. 436 (1999) L707
5. Laukkanen P., Perälä R.E., Vaara R.-L., Väyrynen I.J., Kuzmin M., and Sadowski J. Phys. Rev. B 69 (2004) 205323
6. Maeda F., Watanabe Y., and Oshima M. Phys. Rev. B 48 (1993) 14733
7. Zinck J.J., Tarsa E.J., Brar B., and Speck J.S. J. Appl. Phys. 82 (1997) 6067
8. Moriarty P., Beton P.H., Ma Y.-R., Henini M., and Woolf D.A. Phys. Rev. B 53 (1996) R16148
9. Bennett B.R., Shanabrook B.V., Thibado P.M., Whitman L.J., and Magno R. J. Cryst. Growth 175/176 (1997) 888
10. Tsukamoto S., and Koguchi N. J. Cryst. Growth 201/202 (1999) 118
11. Kresse G., and Heffner J. Phys. Rev. B 54 (1996) 11169
12. Bloechl P.E. Phys. Rev. B 50 (1994) 17953
13. Kresse G., and Joubert D. Phys. Rev. B 59 (1999) 1758
14. Krzyzewski T.J., Joyce P.B., Bell G.R., and Jones T.S. Surf. Sci. 517 (2002) 8
15. Jernigan G.G., and Thompson P.E. Thin Solid Films 380 (2000) 114
16. Park S.K., Tatebayashi J., and Arakawa Y. Appl. Phys. Lett. 84 (2004) 1877
17. Righi M.C., Magri R., and Bertoni C.M. Phys. Rev. B 71 (2005) 075323
18. Franklin G.E., Rich D.H., Samsavar A., Hirschorn E.S., Leibsle F.M., Miller T., and Chiang T.-C. Phys. Rev. B 41 (1990) 12619
19. Sieger M.T., Miller T., and Chiang T.-C. Phys. Rev. B 52 (1995) 8256
20. The cohesion energies of Sb-Sb and Ga-Sb are 2.6 and 1.5 eV, respectively. See also. Whitman L.J., Thibado P.M., Erwin S.C., Bennett B.R., and Shanabrook B.V. Phys. Rev. Lett. 79 (1997) 693
21. Pashley M.D. Phys. Rev. B 40 (1989) 10481
22. Kendrick C., LeLay G., and Kahn A. Phys. Rev. B 54 (1996) 17877