Self-formation of high-density and high-uniformity InAs quantum dots on Sb/GaAs layers by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3427-3429

  Ohta, Masahiko ^a   Kanto, Toru ^a   Yamaguchi, Koichi ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

Coalescence; Crystal quality; Dot density; GaAs; InAs; Molecular beam epitaxy; Quantum dot; Sb

Indexed keywords

ANTIMONY; COALESCENCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

BUFFER LAYERS; CRYSTAL QUALITY; DOT DENSITY; INAS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646928077     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3427     Document Type: Article

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