Dislocations in 6H-SiC and their influence on electrical properties of n-type crystals

EPJ Applied Physics

Volumn 2, Issue 2, 1998, Pages 111-115

  Tillay, V ^a,c   Pailloux, F ^a,c   Denanot, M F ^a,c   Pirouz, P ^b   Rabier, J ^a,c   Demenet, J L ^a,c   Barbot, J F ^a,c  

^a UNIVERSITÉ DE POITIERS   (France)

^b Case Western Reserve University   (United States)

^c UMR 6630 CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; DEFORMATION; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; ELECTRON DIFFRACTION; ENERGY GAP; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

LARGE ANGLE CONVERGENT BEAM ELECTRON DIFFRACTION (LACBED);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031677701     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1998173     Document Type: Article

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