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Volumn 527-529, Issue PART 1, 2006, Pages 67-70

Growth and surface morphologies of 6H SiC bulk and epitaxial crystals

Author keywords

Chemical vapor deposition; Crystal growth; CVD; Dislocations; Etching; Micropipes; Physical vapor transport; PVT; Vapor growth; X ray topography

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL LAYERS; ETCHING; SILICON CARBIDE; SURFACE MORPHOLOGY;

EID: 34249024871     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.67     Document Type: Conference Paper
Times cited : (2)

References (9)
  • 4
    • 37849044434 scopus 로고    scopus 로고
    • G. Dhanaraj, X.R. Huang M. Dudley, V. Prasad and R.H. Ma: Chapter 6, p.181-232 in Crystal Growth Technology, Eds K. Byrappa, T. Ohachi, William Andrew and Springer, NY 2003
    • G. Dhanaraj, X.R. Huang M. Dudley, V. Prasad and R.H. Ma: Chapter 6, p.181-232 in "Crystal Growth Technology, Eds K. Byrappa, T. Ohachi, William Andrew and Springer, NY 2003
  • 8
    • 12844264839 scopus 로고    scopus 로고
    • G. Dhanaraj, F. Liu, M. Dudley, H. Zhang, and V. Prasad: Mater. Res. Soc. Symp. Proc. 815 (2004) p. J5.31.1.
    • G. Dhanaraj, F. Liu, M. Dudley, H. Zhang, and V. Prasad: Mater. Res. Soc. Symp. Proc. Vol. 815 (2004) p. J5.31.1.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.