SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 27-32

PVT growth of 6H SiC crystals and defect characterization

(5) Dhanaraj, Govindhan a Liu, Feng a Dudley, Michael a Zhang, Hui a Prasad, Vish b

a Stony Brook University (United States)

b Florida International University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRIC FIELDS; ETCHING; GRAPHITE; GROWTH KINETICS; HYDROGEN; MATHEMATICAL MODELS; NUCLEATION; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SUBLIMATION;

DEFECT FORMATION; GROWTH PROCESSES; PHYSICAL VAPOR TRANSPORT (PVT); SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHY (SWBXT);

SILICON CARBIDE;

EID: 12844264839 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-815-j5.31 Document Type: Conference Paper

Times cited : (4)

References (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.