Design and fabrication of physical vapor transport system for the growth of SiC crystals

Review of Scientific Instruments

Volumn 75, Issue 9, 2004, Pages 2843-2847

  Dhanaraj, G ^a   Dudley, M ^a   Ma, R H ^a   Zhang, H ^a   Prasad, V ^b  

^a Stony Brook University   (United States)

^b Florida International University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH PARAMETERS; LELY METHOD; NUMERICAL MODELING; PHYSICAL VAPOR TRANSPORT (PVT) SYSTEMS;

COOLING; GRAPHITE; MATHEMATICAL MODELS; NUCLEATION; OPTIMIZATION; PYROMETERS; PYROMETRY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SINGLE CRYSTALS; STOICHIOMETRY; SUBLIMATION; THERMAL CONDUCTIVITY; THERMAL EXPANSION;

CRYSTAL GROWTH;

EID: 7644242511     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1775312     Document Type: Article

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