Conduction mechanisms in thin RF sputtered Ta2O5 films on Si and their dependence on O2 annealing

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

Volumn 2, Issue , 2002, Pages 755-758

  Paskaleva, A ^a   Atanassova, E ^a   Novkovski, N ^b   Pecovska Gjorgjevich, M ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS; SILICON; TANTALUM OXIDES;

AS-DEPOSITED FILMS; CONDUCTION MECHANISM; CURRENT REDUCTION; EFFECT OF OXYGEN; HIGH TEMPERATURE; INFLUENCE OF OXYGEN; INTERMEDIATE FIELDS; STRUCTURAL IMPERFECTIONS;

ANNEALING;

EID: 84876925457     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003367     Document Type: Conference Paper

References (7)

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2. Chaneliere, C., Autran, J. L., Devine, R.A.B. and Baland B., Tantalum pentoxide thin films for advanced dielectric applications. Material Sci. Engin. R 1998; 22: 269-322.
3. Atanassova, E., Spassov, D., Hydrogen annealing effects on the properties of thermal Ta2O5 on Si. Microel. J. 1999; 30: 265-74
4. Atanassova, E., Thin RF sputtered and thermal Ta2O5 on Si for high density DRAM application. Microel. Reliab. 1999; 39: 1185-1217.
5. 2 for high density DRAM applications in: "Handbook of Surfaces and Interfaces of Materials ", ed. H.S. Nalwa, Academic Press, San Diego, California, USA, vol.4, pp. 439-479.
6. Atanassova, E., Dimitrova, T. and Koprinarova, J., AES and XPS study of thin rf sputtered Ta2O5 layers. Appl. Surf. Sci. 1995; 84: 193-202.
7. Oehrlein G.S. Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon. J. Appl.Phys. 1986; 59: 1587-95.