Effect of oxidation temperature on the quality and reliability of ultrathin gate oxide

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 126-128

  Marathe, Vaibhav G ^a   Chandani, Naresh ^a   Dasgupta, Nandita ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

Defects; Leakage current; Reliability; Ultrathin gate oxide

Indexed keywords

ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS CAPACITORS; OXIDATION; ULTRATHIN FILMS;

DEFECT-ASSISTED TUNNELING; ELECTRON TUNNEL MASS PARAMETER; OXIDATION TEMPERATURE; ULTRATHIN GATE OXIDE;

OXIDES;

EID: 33644925813     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.155     Document Type: Conference Paper

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