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Volumn 43, Issue 1, 1996, Pages 31-39

Dynamic characterization of a-Si TFT-LCD pixels

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; COMPUTER SIMULATION; CONVERGENCE OF NUMERICAL METHODS; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; LIQUID CRYSTAL DISPLAYS; MATHEMATICAL MODELS; MATRIX ALGEBRA; PHOTOCONDUCTIVITY;

EID: 0029777040     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477590     Document Type: Article
Times cited : (73)

References (13)
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  • 2
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    • A new analytic model for amorphou silicon thin-film transistors," J
    • M. Shur, M. Hack, and G. Shaw, A new analytic model for amorphou silicon thin-film transistors," J. Appl. Phys., vol. 66, pp. 3371-3380 1989.
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    • Shur, M.1    Hack, M.2    Shaw, G.3
  • 3
    • 0001556128 scopus 로고
    • Modeling of amorphous-silicon thin-fil transistors for circuit simulations with SPICE,"
    • [31 K. Khakzar and E. H. Lueder, Modeling of amorphous-silicon thin-fil transistors for circuit simulations with SPICE," IEEE Trans. Electro Devices, vol. 39, no. 6, pp. 1428-1434, 1992.
    • (1992) IEEE Trans. Electro Devices , vol.39 , Issue.6 , pp. 1428-1434
    • Khakzar, K.1    Lueder, E.H.2
  • 4
    • 21544438388 scopus 로고
    • Charge trapping instabilities in amorphous silicon-silico nitride thin film transistors,"
    • M. J. Powell, Charge trapping instabilities in amorphous silicon-silico nitride thin film transistors," Appl. Phys. Lett., vol. 43, no. 6, pp 597-599, 1983.
    • (1983) Appl. Phys. Lett. , vol.43 , Issue.6 , pp. 597-599
    • Powell, M.J.1
  • 5
    • 84864962237 scopus 로고    scopus 로고
    • A new semi-empirical model for amorphou silicon thin-film-transistors," in
    • pp. 138-139.
    • H. Aoki and E. Khalily, A new semi-empirical model for amorphou silicon thin-film-transistors," in Proc. 1993 Int. VPAD, pp. 138-139.
    • Proc. 1993 Int. VPAD
    • Aoki, H.1    Khalily, E.2
  • 6
    • 0024790666 scopus 로고
    • Threshold voltag instability of a-Si:H TFT's in liquid crystal displays," J
    • N. Ibaraki, M. Kigoshi, K. Fukuda and J. Kobayashi, Threshold voltag instability of a-Si:H TFT's in liquid crystal displays," J. Non-Crystallin Solids, vol. 115, pp. 138-140, 1989.
    • (1989) Non-Crystallin Solids , vol.115 , pp. 138-140
    • Ibaraki, N.1    Kigoshi, M.2    Fukuda, K.3    Kobayashi, J.4
  • 9
    • 0027539535 scopus 로고
    • A computer model fo inter-electrode capacitance-voltage characteristics of an a-Si:H TFT
    • J. S. Choi, G. W. Neudeck and S. Luan, A computer model fo inter-electrode capacitance-voltage characteristics of an a-Si:H TFT, Solid-State Electron., vol. 36, no. 2, pp. 223-228, 1993.
    • (1993) Solid-State Electron. , vol.36 , Issue.2 , pp. 223-228
    • Choi, J.S.1    Neudeck, G.W.2    Luan, S.3
  • 10
    • 0015025121 scopus 로고
    • MOS models and circuit simulation,"
    • J. E. Meyer, MOS models and circuit simulation," RCA Rev., vol. 32 pp. 42-63, 1971.
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  • 13
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    • Optical characteristics simulations of TFT-LCD,"
    • vol. J73-C-II
    • K. Ono, T. Tanaka, N. Konishi and J. Ohwada, Optical characteristics simulations of TFT-LCD," Jpn. IEIC C-II, vol. J73-C-II, pp. 681-694, 1990.
    • (1990) Jpn. IEIC C-II , pp. 681-694
    • Ono, K.1    Tanaka, T.2    Konishi, N.3    Ohwada, J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.