X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy

Semiconductors

Volumn 41, Issue 5, 2007, Pages 555-559

  Rogozin, I V ^a   Kotlyarevsky, M B ^b  

^a BERDYANSK STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

^b Academy of Management and Information Technologies   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34248382164     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782607050156     Document Type: Article

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