Transient hole formation during the growth of thin metal oxide layers

Computational Materials Science

Volumn 39, Issue 4, 2007, Pages 794-802

  Zhou, X W ^a   Wadley, H N G ^b   Wang, D X ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b University of Virginia   (United States)

^c NVE CORPORATION   (United States)

Author keywords

Aluminum oxide; Charge transfer potential; Embedded atom method; Magnetic tunnel junction; Molecular dynamics; Multilayer

Indexed keywords

CHARGE TRANSFER DEVICES; IRON COMPOUNDS; MOLECULAR DYNAMICS; MULTILAYERS; OXIDATION; POTENTIAL ENERGY;

ALUMINUM OXIDE; CHARGE TRANSFER POTENTIAL; EMBEDDED ATOM METHOD; MAGNETIC TUNNEL JUNCTION;

ALUMINUM COMPOUNDS;

EID: 34248229200     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2006.10.006     Document Type: Article

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