-
1
-
-
0027815541
-
High speed SiGe-HBT with very low base sheet resistivity
-
E. Kasper, A. Gruhle, and H. Kibbel, "High speed SiGe-HBT with very low base sheet resistivity," in IEDM Tech. Dig., 1993, pp. 79-81.
-
(1993)
IEDM Tech. Dig
, pp. 79-81
-
-
Kasper, E.1
Gruhle, A.2
Kibbel, H.3
-
2
-
-
84907816279
-
200 GHz SiGe hetero bipolar transistor design
-
J. Eberhardt and E. Kasper, "200 GHz SiGe hetero bipolar transistor design," in Proc. ESSDERC, 2000, pp. 572-575.
-
(2000)
Proc. ESSDERC
, pp. 572-575
-
-
Eberhardt, J.1
Kasper, E.2
-
4
-
-
0036706583
-
Linking with light
-
Aug
-
N. Savage, "Linking with light," IEEE Spectr., vol. 39, no. 8, pp. 32-36, Aug. 2002.
-
(2002)
IEEE Spectr
, vol.39
, Issue.8
, pp. 32-36
-
-
Savage, N.1
-
5
-
-
27144472962
-
The silicon solution
-
Oct
-
M. Paniccia and S. Koehl, "The silicon solution," IEEE Spectr., vol. 42, no. 10, pp. 38-43, Oct. 2005.
-
(2005)
IEEE Spectr
, vol.42
, Issue.10
, pp. 38-43
-
-
Paniccia, M.1
Koehl, S.2
-
6
-
-
27144489129
-
Light from silicon
-
Oct
-
S. Coffa, "Light from silicon," IEEE Spectr., vol. 42, no. 10, pp. 44-49, Oct. 2005.
-
(2005)
IEEE Spectr
, vol.42
, Issue.10
, pp. 44-49
-
-
Coffa, S.1
-
7
-
-
0345307327
-
High efficiency light emitting devices in silicon
-
Dec
-
M. E. Castagna, S. Coffa, M. Monaco, A. Muscara, L. Caristia, S. Lorenti, and A. Messina, "High efficiency light emitting devices in silicon," Mater. Sci. Eng. B, vol. 105, no. 1, pp. 82-89, Dec. 2003.
-
(2003)
Mater. Sci. Eng. B
, vol.105
, Issue.1
, pp. 82-89
-
-
Castagna, M.E.1
Coffa, S.2
Monaco, M.3
Muscara, A.4
Caristia, L.5
Lorenti, S.6
Messina, A.7
-
8
-
-
0242304965
-
Light emission from silicon: Some perspective and applications
-
Oct
-
A. T. Fiory and N. M. Ravindra, "Light emission from silicon: Some perspective and applications," J. Electron. Mater., vol. 32, no. 10, pp. 1043-1051, Oct. 2003.
-
(2003)
J. Electron. Mater
, vol.32
, Issue.10
, pp. 1043-1051
-
-
Fiory, A.T.1
Ravindra, N.M.2
-
9
-
-
33646178803
-
-
S. Pillai, K. R. Catchpole, T. Trupke, G. Zhang, J. Zhao, and M. A. Green, Enhanced emission from Si-based light-emitting diodes using surface plasmons, Appl. Phys. Lett., 88, no. 16, pp. 161 102-1-161 102-3, 2006.
-
S. Pillai, K. R. Catchpole, T. Trupke, G. Zhang, J. Zhao, and M. A. Green, "Enhanced emission from Si-based light-emitting diodes using surface plasmons," Appl. Phys. Lett., vol. 88, no. 16, pp. 161 102-1-161 102-3, 2006.
-
-
-
-
10
-
-
27744485605
-
-
M. A. Lourenco, M. Milosavljevic, R. M. Gwilliam, K. P. Homewood, and G. Shao, On the role of dislocation loops in silicon light emitting diodes, Appl. Phys. Lett., 87, no. 20, pp. 201 105-1-201 105-3, 2005.
-
M. A. Lourenco, M. Milosavljevic, R. M. Gwilliam, K. P. Homewood, and G. Shao, "On the role of dislocation loops in silicon light emitting diodes," Appl. Phys. Lett., vol. 87, no. 20, pp. 201 105-1-201 105-3, 2005.
-
-
-
-
11
-
-
13444267712
-
Silicon-based light emission after ion implantation
-
M. Kittler, T. Arguirov, A. Fischer, and W. Seifert, "Silicon-based light emission after ion implantation," Opt. Mater., vol. 27, no. 5, pp. 967-972, 2006.
-
(2006)
Opt. Mater
, vol.27
, Issue.5
, pp. 967-972
-
-
Kittler, M.1
Arguirov, T.2
Fischer, A.3
Seifert, W.4
-
12
-
-
33646523438
-
-
J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions, Appl. Phys. Lett., 88, no. 18, pp. 182 112-1-182 112-3, 2006.
-
J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, "Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions," Appl. Phys. Lett., vol. 88, no. 18, pp. 182 112-1-182 112-3, 2006.
-
-
-
-
13
-
-
0015200003
-
Hot carriers in Si and Ge radiation detectors
-
Dec
-
W. E. Drummond and J. L. Moll, "Hot carriers in Si and Ge radiation detectors," J. Appl. Phys., vol. 42, no. 13, pp. 5556-5562, Dec. 1971.
-
(1971)
J. Appl. Phys
, vol.42
, Issue.13
, pp. 5556-5562
-
-
Drummond, W.E.1
Moll, J.L.2
-
14
-
-
0001653098
-
Modelling of light-emission spectra measured on silicon nanometre-scale diode antifuses
-
Aug
-
N. Akil, V. E. Houtsma, P. LeMinh, J. Holleman, V. Zieren, D. de Mooij, P. H. Woerlee, A. van den Berg, and H. Wallinga, "Modelling of light-emission spectra measured on silicon nanometre-scale diode antifuses," J. Appl. Phys., vol. 88, no. 4, pp. 1916-1922, Aug. 2000.
-
(2000)
J. Appl. Phys
, vol.88
, Issue.4
, pp. 1916-1922
-
-
Akil, N.1
Houtsma, V.E.2
LeMinh, P.3
Holleman, J.4
Zieren, V.5
de Mooij, D.6
Woerlee, P.H.7
van den Berg, A.8
Wallinga, H.9
-
15
-
-
27944467228
-
Novel evaluation of intra-grain defects in polycrystalline Silicon solar cells using light emission
-
Y. Kaji, H. Kondo, Y. Takahashi, T. Yamazaki, Y. Uraoka, and T. Fuyuki, "Novel evaluation of intra-grain defects in polycrystalline Silicon solar cells using light emission," in Proc. Photovoltaic Spec. Conf. 2005, pp. 1346-1348.
-
(2005)
Proc. Photovoltaic Spec. Conf
, pp. 1346-1348
-
-
Kaji, Y.1
Kondo, H.2
Takahashi, Y.3
Yamazaki, T.4
Uraoka, Y.5
Fuyuki, T.6
-
16
-
-
1642347972
-
100 GHz S-parameter measurements of monolithically integrated silicon Impatt diodes
-
Piscatway, NJ
-
C. Schöllhorn, W. Zhao, M. Morschbach, and M. Oehme, "100 GHz S-parameter measurements of monolithically integrated silicon Impatt diodes," in Proc. SBMO/IEEE MTT-S IMOC, Piscatway, NJ, 2003, vol. 2, pp. 1075-1080.
-
(2003)
Proc. SBMO/IEEE MTT-S IMOC
, vol.2
, pp. 1075-1080
-
-
Schöllhorn, C.1
Zhao, W.2
Morschbach, M.3
Oehme, M.4
-
17
-
-
33646090397
-
High-speed germanium photodiodes monolithically integrated on silicon with MBE
-
Jun
-
M. Oehme, J. Werner, M. Jutzi, G. Woehl, E. Kasper, and M. Berroth, "High-speed germanium photodiodes monolithically integrated on silicon with MBE," Thin Solid Films, vol. 508, no. 1/2, pp. 393-395, Jun. 2006.
-
(2006)
Thin Solid Films
, vol.508
, Issue.1-2
, pp. 393-395
-
-
Oehme, M.1
Werner, J.2
Jutzi, M.3
Woehl, G.4
Kasper, E.5
Berroth, M.6
-
18
-
-
34247848996
-
Growth of 100 GHz IMPATT diodes with epitaxial buried layer
-
M. Oehme, C. Schöllhorn, and E. Kasper, "Growth of 100 GHz IMPATT diodes with epitaxial buried layer," in Proc. 3rd Int. Conf. SiGe/C Epitaxy and Heterostructures, 2003, pp. 221-223.
-
(2003)
Proc. 3rd Int. Conf. SiGe/C Epitaxy and Heterostructures
, pp. 221-223
-
-
Oehme, M.1
Schöllhorn, C.2
Kasper, E.3
-
19
-
-
24944585757
-
IMPATT diodes
-
J. D. Cressler, Ed. Boca Raton, FL: CRC Press
-
E. Kasper and M. Oehme, "IMPATT diodes," in Silicon Heterostructure Handbook, J. D. Cressler, Ed. Boca Raton, FL: CRC Press, 2006, pp. 661-678.
-
(2006)
Silicon Heterostructure Handbook
, pp. 661-678
-
-
Kasper, E.1
Oehme, M.2
|