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Volumn , Issue , 2000, Pages 572-575

200GHz SiGe hetero bipolar transistor design

Author keywords

[No Author keywords available]

Indexed keywords

SILICON ALLOYS; SOLID STATE DEVICES;

EID: 84907816279     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194842     Document Type: Conference Paper
Times cited : (6)

References (17)
  • 1
    • 0032072280 scopus 로고    scopus 로고
    • SiGeHBTTechnology:ANewContenderfor Si Based RF and microwave circuit applications
    • May
    • J.D. Cressler,"SiGeHBTTechnology:ANewContenderfor Si Based RF and Microwave Circuit Applications", IEEE Trans, on Microwave Theory and Techn.", May 1998, pp. 572
    • (1998) IEEE Trans, on Microwave Theory and Techn. , pp. 572
    • Cressler, J.D.1
  • 6
    • 84907839819 scopus 로고    scopus 로고
    • Wiley & Sons, New York
    • Chang, Sze, ULSI Devices, Wiley & Sons, New York, 2000
    • (2000) Sze, ULSI Devices
    • Chang1
  • 8
    • 0027815541 scopus 로고
    • High Speed SiGe-HBT with very low base sheet resistivity
    • IEEE, Piscataway
    • E. Kasper, A. Gruhle, H. Kibbel, "High Speed SiGe-HBT With Very Low Base Sheet Resistivity", Techn. Digest IEDM, IEEE, Piscataway, 1993, pp.79-81
    • (1993) Techn. Digest IEDM , pp. 79-81
    • Kasper, E.1    Gruhle, A.2    Kibbel, H.3
  • 9
    • 0026838232 scopus 로고
    • Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction
    • March
    • K. Suzuki, N. Nakayama, "Base Transit Time of Shallow-Base Bipolar Transistors Considering Velocity Saturation at Base-Collector Junction", IEEE Trans. on Electr. Dev., March 1992, pp. 623-28
    • (1992) IEEE Trans. on Electr. Dev , pp. 623-628
    • Suzuki, K.1    Nakayama, N.2
  • 13
    • 0031170219 scopus 로고    scopus 로고
    • Low-and high-field electron-transport parameters for unstrained and strained Sii.xGex
    • June
    • F. M. Bufler, P. Graf, B. Meinerzhagen et al., "Low-and High-Field Electron-Transport Parameters for Unstrained and Strained Sii.xGex", IEEE Electron Device Letters Vol 18, June 1997, pp. 264-66
    • (1997) IEEE Electron Device Letters , vol.18 , pp. 264-266
    • Bufler, F.M.1    Graf, P.2    Meinerzhagen, B.3
  • 15
    • 84907839817 scopus 로고
    • Properties of strained and relaxed SiGe
    • London
    • E. Kasper, Properties of Strained and Relaxed SiGe, IEEINSPEC, London, 1995
    • (1995) IEEINSPEC
    • Kasper, E.1
  • 16
    • 0027889053 scopus 로고
    • Vertical profile optimization of very high frequency epitaxial Si and SiGe-base bipolar devices
    • E.F. Crabbe, B.S. Meyerson, J.M.C. Stork, D.L. Harame, "Vertical profile optimization of very high frequency epitaxial Si and SiGe-base bipolar devices", IEDM Technical Digest, pp. 83-86, 1993
    • (1993) IEDM Technical Digest , pp. 83-86
    • Crabbe, E.F.1    Meyerson, B.S.2    Stork, J.M.C.3    Harame, D.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.