180 nm metal gate, high-k dielectric, implant-free III-V MOSFETs with transconductance of over 425 μS/μm

Electronics Letters

Volumn 43, Issue 9, 2007, Pages 543-545

  Hill, R J W ^a   Moran, D A J ^a   Li, X ^a   Zhou, H ^a   Macintyre, D ^a   Thoms, S ^a   Droopad, R ^b   Passlack, M ^b   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

DECA-NANOMCTRE DIMENSIONS; GATE LENGTH; METAL GATES;

MOSFET DEVICES;

EID: 34247598369     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20070427     Document Type: Article

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