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Volumn 17, Issue 5, 2007, Pages 361-363

Determination and validation of new nonlinear FinFET model based on lookup tables

Author keywords

Fin field effect transistor (FinFET); Large signal measurements; Lookup table; Multiple gate structure; Nonlinear model

Indexed keywords

CMOS INTEGRATED CIRCUITS; NANOTECHNOLOGY; NONLINEAR ANALYSIS; TABLE LOOKUP;

EID: 34247589328     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2007.895711     Document Type: Article
Times cited : (42)

References (11)
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    • Root, D.E.1    Fan, S.2    Meyer, J.3
  • 2
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    • Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test structures
    • Apr
    • E. P. Vandamme, D. Schreurs, and C. van Dinther, "Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test structures," IEEE Trans. Electron Devices, vol. 48, no. 4, pp. 737-742, Apr. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , Issue.4 , pp. 737-742
    • Vandamme, E.P.1    Schreurs, D.2    van Dinther, C.3
  • 3
    • 0036498467 scopus 로고    scopus 로고
    • Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3 v3 compact model
    • Mar
    • E. P. Vandamme, D. Schreurs, C. van Dinther, G. Badenes, and L. Deferm, "Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3 v3 compact model," Solid-State Electron., vol. 46, no. 3, pp. 353-360, Mar. 2002.
    • (2002) Solid-State Electron , vol.46 , Issue.3 , pp. 353-360
    • Vandamme, E.P.1    Schreurs, D.2    van Dinther, C.3    Badenes, G.4    Deferm, L.5
  • 8
    • 33751224205 scopus 로고    scopus 로고
    • Scalable and multibias high frequency modeling of multi fin FETs
    • Nov./Dec
    • G. Crupi, D. Schreurs, B. Parvais, A. Caddemi, A. Mercha, and S. Decoutere, "Scalable and multibias high frequency modeling of multi fin FETs," Solid-State Electron., vol. 50, no. 10/11, pp. 1780-1786, Nov./Dec. 2006.
    • (2006) Solid-State Electron , vol.50 , Issue.10-11 , pp. 1780-1786
    • Crupi, G.1    Schreurs, D.2    Parvais, B.3    Caddemi, A.4    Mercha, A.5    Decoutere, S.6
  • 9
    • 0029210706 scopus 로고
    • Accurate on-wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal ports of a nonlinear microwave device
    • J. Verspecht, P. Debie, A. Barel, and L. Martens, "Accurate on-wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal ports of a nonlinear microwave device," in IEEE MTT-S Int. Dig., 1995, pp. 1029-1032.
    • (1995) IEEE MTT-S Int. Dig , pp. 1029-1032
    • Verspecht, J.1    Debie, P.2    Barel, A.3    Martens, L.4
  • 10
    • 0036564634 scopus 로고    scopus 로고
    • Impact of pad and gate parasitics on small-signal and noise modeling of 0.35-μm gate length MOS transistors
    • May
    • P. Sakalas, H. G. Zirath, A. Litwin, M. Schröter, and A. Matulionis, "Impact of pad and gate parasitics on small-signal and noise modeling of 0.35-μm gate length MOS transistors," IEEE Trans. Electron Devices, vol. 49, no. 5, pp. 871-880, May 2002.
    • (2002) IEEE Trans. Electron Devices , vol.49 , Issue.5 , pp. 871-880
    • Sakalas, P.1    Zirath, H.G.2    Litwin, A.3    Schröter, M.4    Matulionis, A.5
  • 11
    • 4243992610 scopus 로고    scopus 로고
    • Measurement Based Modeling of Heterojunction Field Effect Devices for Nonlinear Microwave Circuit Design,
    • Ph.D. dissertation, Dept. Elect. Eng, KULeuven, Heverlee, Belgium
    • D. Schreurs, "Measurement Based Modeling of Heterojunction Field Effect Devices for Nonlinear Microwave Circuit Design," Ph.D. dissertation, Dept. Elect. Eng., KULeuven, Heverlee, Belgium, 1997.
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    • Schreurs, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.