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1
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0026395570
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Technology independent large signal non quasistatic FET models by direct construction from automatically characterized device data
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Stuttgart, Germany, Sep
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D. E. Root, S. Fan, and J. Meyer, "Technology independent large signal non quasistatic FET models by direct construction from automatically characterized device data," in Proc. 21th Eur. Microw. Conf., Stuttgart, Germany, Sep. 1991, pp. 927-932.
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(1991)
Proc. 21th Eur. Microw. Conf
, pp. 927-932
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Root, D.E.1
Fan, S.2
Meyer, J.3
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2
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0035307256
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Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test structures
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Apr
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E. P. Vandamme, D. Schreurs, and C. van Dinther, "Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test structures," IEEE Trans. Electron Devices, vol. 48, no. 4, pp. 737-742, Apr. 2001.
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(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.4
, pp. 737-742
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Vandamme, E.P.1
Schreurs, D.2
van Dinther, C.3
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3
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0036498467
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Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3 v3 compact model
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Mar
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E. P. Vandamme, D. Schreurs, C. van Dinther, G. Badenes, and L. Deferm, "Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3 v3 compact model," Solid-State Electron., vol. 46, no. 3, pp. 353-360, Mar. 2002.
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(2002)
Solid-State Electron
, vol.46
, Issue.3
, pp. 353-360
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Vandamme, E.P.1
Schreurs, D.2
van Dinther, C.3
Badenes, G.4
Deferm, L.5
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4
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0037291685
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A 110-GHz large-signal lookup-table model for InP HEMTs including impact ionization effects
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Feb
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A. Orzati, D. Schreurs, L. Pergola, H. Benedickter, F. Robin, O. J. Homan, and W. Bachtold, "A 110-GHz large-signal lookup-table model for InP HEMTs including impact ionization effects," IEEE Trans. Microw. Theory Tech., vol. 51, no. 2, pp. 468-474, Feb. 2003.
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(2003)
IEEE Trans. Microw. Theory Tech
, vol.51
, Issue.2
, pp. 468-474
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Orzati, A.1
Schreurs, D.2
Pergola, L.3
Benedickter, H.4
Robin, F.5
Homan, O.J.6
Bachtold, W.7
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5
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11244345630
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Development and verification of a non-linear look-up table model for RF Silicon BJTs
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Milano, Italy, Sep
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M. Myslinski, D. Schreurs, and W. Wiatr, "Development and verification of a non-linear look-up table model for RF Silicon BJTs," in Proc. 10th Eur. Gallium Arsenide Other Semicond. Appl. Symp. (GAAS), Milano, Italy, Sep. 2002, pp. 93-96.
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(2002)
Proc. 10th Eur. Gallium Arsenide Other Semicond. Appl. Symp. (GAAS)
, pp. 93-96
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Myslinski, M.1
Schreurs, D.2
Wiatr, W.3
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6
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0032255808
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A folded-channel MOSFET for deep-sub-tenth micron era
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San Francisco, CA, Dec
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D. Hisamoto, W. C. Lee, J. Kedzierski, E. Anderson, H. Takeuchi, K. Asano, T.-J. King, J. Bokor, and C. Hu, "A folded-channel MOSFET for deep-sub-tenth micron era," in Int. Electron Devices Meeting (IEDM) Tech. Dig., San Francisco, CA, Dec. 1998, pp. 1032-1034.
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(1998)
Int. Electron Devices Meeting (IEDM) Tech. Dig
, pp. 1032-1034
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Hisamoto, D.1
Lee, W.C.2
Kedzierski, J.3
Anderson, E.4
Takeuchi, H.5
Asano, K.6
King, T.-J.7
Bokor, J.8
Hu, C.9
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7
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37649030925
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Suitability of FinFET technology for low-power mixed-signal applications
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Padova, Italy, May
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B. Parvais, C. Gustin, V. DeHeyn, J. Loo, M. Dehan, V. Subramanian, A. Mercha, N. Collaert, R. Rooyackers, M. Jurczak, P. Wambacq, and S. Decoutere, "Suitability of FinFET technology for low-power mixed-signal applications," in Int. Conf. IC Design Technol. (ICICDT), Padova, Italy, May 2006, pp. 76-79.
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(2006)
Int. Conf. IC Design Technol. (ICICDT)
, pp. 76-79
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Parvais, B.1
Gustin, C.2
DeHeyn, V.3
Loo, J.4
Dehan, M.5
Subramanian, V.6
Mercha, A.7
Collaert, N.8
Rooyackers, R.9
Jurczak, M.10
Wambacq, P.11
Decoutere, S.12
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8
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33751224205
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Scalable and multibias high frequency modeling of multi fin FETs
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Nov./Dec
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G. Crupi, D. Schreurs, B. Parvais, A. Caddemi, A. Mercha, and S. Decoutere, "Scalable and multibias high frequency modeling of multi fin FETs," Solid-State Electron., vol. 50, no. 10/11, pp. 1780-1786, Nov./Dec. 2006.
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(2006)
Solid-State Electron
, vol.50
, Issue.10-11
, pp. 1780-1786
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Crupi, G.1
Schreurs, D.2
Parvais, B.3
Caddemi, A.4
Mercha, A.5
Decoutere, S.6
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9
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0029210706
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Accurate on-wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal ports of a nonlinear microwave device
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J. Verspecht, P. Debie, A. Barel, and L. Martens, "Accurate on-wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal ports of a nonlinear microwave device," in IEEE MTT-S Int. Dig., 1995, pp. 1029-1032.
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(1995)
IEEE MTT-S Int. Dig
, pp. 1029-1032
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Verspecht, J.1
Debie, P.2
Barel, A.3
Martens, L.4
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10
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0036564634
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Impact of pad and gate parasitics on small-signal and noise modeling of 0.35-μm gate length MOS transistors
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May
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P. Sakalas, H. G. Zirath, A. Litwin, M. Schröter, and A. Matulionis, "Impact of pad and gate parasitics on small-signal and noise modeling of 0.35-μm gate length MOS transistors," IEEE Trans. Electron Devices, vol. 49, no. 5, pp. 871-880, May 2002.
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(2002)
IEEE Trans. Electron Devices
, vol.49
, Issue.5
, pp. 871-880
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Sakalas, P.1
Zirath, H.G.2
Litwin, A.3
Schröter, M.4
Matulionis, A.5
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11
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4243992610
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Measurement Based Modeling of Heterojunction Field Effect Devices for Nonlinear Microwave Circuit Design,
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Ph.D. dissertation, Dept. Elect. Eng, KULeuven, Heverlee, Belgium
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D. Schreurs, "Measurement Based Modeling of Heterojunction Field Effect Devices for Nonlinear Microwave Circuit Design," Ph.D. dissertation, Dept. Elect. Eng., KULeuven, Heverlee, Belgium, 1997.
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(1997)
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Schreurs, D.1
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