Gate bias dependence of the substrate signal coupling effect in RF MOSFETs

IEEE Electron Device Letters

Volumn 24, Issue 3, 2003, Pages 183-185

  Je, Minkyu ^a   Shin, Hyungcheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

CMOS RF modeling; RF MOSFET; Substrate resistance; Substrate signal coupling

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC ADMITTANCE; ELECTRIC RESISTANCE; GATES (TRANSISTOR); RESISTORS; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

MULTIFINGERED GATE STRUCTURE; ONE-SUBSTRATE-RESISTOR MODEL; SUBSTRATE RESISTANCE; SUBSTRATE SIGNAL COUPLING;

MOSFET DEVICES;

EID: 0038275857     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.809530     Document Type: Letter

References (10)

1. S. H.-M. Jen, C. C. Enz, D. R. Pehlke, M. Schröter, and B. J. Sheu, "Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz," IEEE Trans. Electron Devices, vol. 46, pp. 2217-2227, Nov. 1999.
2. I. Kwon, M. Je, K. Lee, and H. Shin, "A simple and analytical parameter extraction method of MOSFET for microwave modeling," IEEE Trans. Microwave Theory Tech., vol. 50, pp. 1503-1509, June 2002.
3. S. F. Tin, A. A. Osman, K. Mayaram, and C. Hu, "A simple subcircuit extension of the BSIM3v3 model for CMOS RF design," IEEE J. Solid-State Circuits, vol. 35, pp. 612-624, Apr. 2000.
4. M. Bagheri and Y. Tsividis, "A small signal DC-to-high-frequency nonquasistatic model for the four-terminal MOSFET valid in all regions of operation," IEEE Trans. Electron Devices, vol. ED-32, pp. 2383-2391, Nov. 1985.
5. Y. Tsividis, Operation and Modeling of the MOS Transistor, 2nd ed. New York: McGraw-Hill, 1999.
6. A. Pascht, M. Grozing, D. Wiegner, and M. Berroth, "Small-signal and temperature noise model for RF MOSFETs," IEEE Trans. Microwave Theory Tech., vol. 50, pp. 1927-1934, Aug. 2002.
7. J. Han, M. Je, and H. Shin, "A simple and accurate method for extracting substrate resistance of RF MOSFETs," IEEE Electron Device Lett., vol. 23, pp. 434-436, July 2002.
8. Y. Cheng and M. Matloubian, "On the high-frequency characteristics of substrate resistance in RF MOSFETs," IEEE Electron Device Lett., vol. 21, pp. 604-606, Dec. 2000.
9. J.-J. Ou, X. Jin, I. Ma, C. Hu, and P. R. Gray, "CMOS RF modeling for GHz communication IC's," in IEEE Symp. VLSI Technology, 1998, pp. 94-95.
10. R. Sung, P. Bendix, and M. B. Das, "Extraction of high-frequency equivalent circuit parameters of submicron gate-length MOSFET's," IEEE Trans. Electron Devices, vol. 45, pp. 1769-1775, Aug. 1998.