Parameter extraction of accurate and scaleable substrate resistance components in RF MOSFETs

IEEE Electron Device Letters

Volumn 23, Issue 4, 2002, Pages 221-223

  Cheng, Yuhua ^a,b   Matloubian, Mishel ^a,b  

^a IEEE   (United States)

^b Conexant Systems ^*  (United States)

Author keywords

Parameter extraction of substrate resistance; RF IC design; RF MOSFET modeling; Substrate network

Indexed keywords

PARAMETER EXTRACTION; SUBSTRATE RESISTANCE;

ELECTRIC RESISTANCE MEASUREMENT; FREQUENCIES; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; PARAMETER ESTIMATION; SUBSTRATES;

MOSFET DEVICES;

EID: 0036541717     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.992845     Document Type: Article

References (9)

1. R.F. MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model
2. RF modeling issues of deep-submicron MOSFETs for circuit design
3. Accurate modeling and parameter extraction for MOS transistor valid up to 10 GHz
4. High frequency application of MOS compact models and their development for scalable RF model libraries
5. CMOS RF modeling for GHz communication ICs
6. Substrate network modeling for CMOS RF circuit simulation
7. On the high frequency characteristics of the substrate resistance in RF MOSFETs
8. MOS transistor modeling for RF IC design