Extraction of substrate parameters for RF MOSFETs based on four-port measurement

IEEE Microwave and Wireless Components Letters

Volumn 15, Issue 6, 2005, Pages 437-439

  Wu, Shih Dao ^a   Huang, Guo Wei ^b   Chen, Kun Ming ^b   Chang, Chun Yen ^a   Tseng, Hua Chou ^c   Hsu, Tsun Lai ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Four port measurement; Radio frequency (rf) metal oxide semiconductor field effect transistors (mosfets); Substrate resistance

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC ADMITTANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; MATRIX ALGEBRA; MICROWAVES; NATURAL FREQUENCIES; SUBSTRATES;

BIAS VOLTAGE; FOUR-PORT MEASUREMENT; RADIO FREQUENCIES (RF); SUBSTRATE FREQUENCIES;

MOSFET DEVICES;

EID: 22344437011     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.850566     Document Type: Article

References (7)

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