X-ray-emission study of the structure of Si:H layers formed by low-energy hydrogen-ion implantation

Semiconductors

Volumn 36, Issue 5, 2002, Pages 568-573

  Galakhov, V R ^a   Antonova, I V ^b   Shamin, S N ^a   Aksenova, V I ^a   Obodnikov, V I ^b   Gutakovskii, A K ^b   Popov, V P ^b  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036588621     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1478550     Document Type: Article

References (10)

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