Czochralski silicon characterization by using thermoelectric power measurements at high pressure

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 1026-1030

  Shchennikov, V V ^a   Gudina, S V ^a   Misiuk, A ^b   Shamin, S N ^a  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Czochralski silicon; High pressure; Thermoelectric power

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CORRELATION METHODS; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; DIAMONDS; DOPING (ADDITIVES); ELECTRIC POWER MEASUREMENT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROSTATIC PRESSURE; MECHANICAL PROPERTIES; MICROHARDNESS; OPTICAL MICROSCOPY; PHASE TRANSITIONS; THERMOELECTRICITY;

CZOCHRALSKI SILICON; MECHANICAL STABILITY; THERMOELECTRIC POWER;

SILICON;

EID: 0346685978     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.207     Document Type: Conference Paper

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