Characterization of 3C-SiC monocrystals using positron annihilation spectroscopy

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 825-828

  Kerbiriou, X ^a   Gredde A ^a   Barthe, M F ^a   Desgardin, P ^a   Blondiaux, G ^a  

^a Centre National de la Recherche Scientifique   (France)

Author keywords

Doppler Broadening; Lifetime Spectroscopy; Polishing; Positron Annihilation; SiC; Vacancy Defects

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; DOPING (ADDITIVES); DOPPLER EFFECT; NANOSTRUCTURED MATERIALS; POLISHING; POSITRON ANNIHILATION SPECTROSCOPY;

DOPPLER BROADENING SPECTROMETERS; POSITRON BEAMS; VACANCY DEFECTS;

SILICON CARBIDE;

EID: 8744294980     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.825     Document Type: Conference Paper

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