Deep-trench vertical Si photodiodes for improved efficiency and crosstalk

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 13, Issue 2, 2007, Pages 386-390

  Mita, Yoshio ^a,b   Hirose, Kenichiro ^a,b   Kubota, Masanori ^a,b   Shibata, Tadashi ^a,b  

^a IEEE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Deep reactive ion etching (DRIE); Photo detector; Thermal diffusion; Trench diode

Indexed keywords

DEEP REACTIVE ION ETCHING (DRIE); PHOTO DETECTOR; TRENCH DIODE;

CROSSTALK; MEMS; SILICON; SILICON WAFERS; THERMAL DIFFUSION; THREE DIMENSIONAL;

PHOTODIODES;

EID: 34247492918     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2007.893078     Document Type: Article

References (10)

1. C. Marxer, C. Thio, M.-A. Grétillat, N. F. de Rooij, R. Bäattig, O. Anthamatten, B. Valk, and P. Vogel, "Vertical mirrors fabricated by deep reactive ion etching for fiber-optic switching applications," IEEE J. Microelectromech. Syst., vol. 6, no. 3, pp. 277-285, 1997.
2. J. K. Robertson, "A vertical micromachined resistive heater for a micro-gas separation column," Sens. Actuators A: Phys., vol. 91, no. 3, pp. 333-339, 2001.
3. C. Rochefort and R. van Dalen, "Vertical RESURF diodes manufactured by deep-trench etch and vapor-phase doping," IEEE Electron Device Lett., vol. 25, no. 2, pp. 73-75, Feb. 2004.
4. K. Hirose, Y. Mita, M. Kubota, and T. Shibata, "Deep-trench vertical Si photodiode towards active-device integrated OMEMS," in Proc. IEEE/LEOS Int. Conf. Opt. MEMS, Big Sky, MT, Aug. 20-23, 2006, pp. 191-192.
5. S. H. Zaidi, D. S. Ruby, and J. M. Gee, "Characterization of random reactive ion etched-textured silicon solar cells," IEEE Trans. Electron Devices, vol. 48, no. 6, pp. 1200-1206, Jun. 2001.
6. Y. Mita, M. Mita, A. Tixier, J.-P. Gouy, and H. Fujita, "Embedded-maskmethods for mm-scale multi-layer vertical/slanted Si structures," in Proc. 13th Annu. Int. Conf. Micro Electro Mech. Syst., Miyazaki, Japan, Jan. 23-27, 2006, pp. 300-305.
7. R. Kakoschke, R. E. Kaim, P. F. H. M. van der Meulen, and J. F. M. Westendorp, "Trench sidewall implantation with a parallel scanned ion beam," IEEE Trans. Electron Devices, vol. 37, no. 4, pp. 1052-1056, Apr. 1990.
8. H. Jansen, M. de Boer, R. Wiegerink, N. Tas, E. Smulders, C. Neagu, and M. Elwenspoek, "RIE lag in high aspect ratio trench etching of silicon," Microelectron. Eng., vol. 35, no. 1-4, pp. 45-50, 1997.
9. M. Francou, J. S. Danel, and L. Peccoud, "Deep and fast plasma etching for silicon micromachining," Sens. Actuators A: Phys., vol. 46-47, pp. 17-21, 1995.
10. A. A. Ayon, R. Braff, C. C. Lin, H. H. Sawin, and M. A. Schmidt, "Characterization of a time multiplexed inductively coupled plasma etcher," J. Electrochem. Soc., vol. 146, no. 1, pp. 339-149, 1999.