Vertical RESURF Diodes Manufactured by Deep-Trench Etch and Vapor-Phase Doping

IEEE Electron Device Letters

Volumn 25, Issue 2, 2004, Pages 73-75

  Rochefort, C ^a   Van Dalen, R ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Power MOSFET; Schottky; Superjunction; Vapor phase doping

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ETCHING; LEAKAGE CURRENTS; MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

POWER MOSFET; SCHOTTKY BARRIERS; SUPERJUNCTIONS; VAPOR-PHASE DOPING (VPD);

SEMICONDUCTOR DIODES;

EID: 1342308178     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.822649     Document Type: Article

References (11)

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