Determination of the chemical width of grain boundaries of boron- and carbon-doped hot-pressed β-SiC by HAADF imaging and ELNES line-profile

Acta Materialia

Volumn 48, Issue 4, 2000, Pages 903-910

  Kaneko, K ^a   Kawasaki, M ^b   Nagano, T ^a   Tamari, N ^c   Tsurekawa, S ^d  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b JEOL LTD   (Japan)

^c OSAKA NATIONAL RESEARCH INSTITUTE   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARBON; CERAMIC MATRIX COMPOSITES; DOPING (ADDITIVES); ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN BOUNDARIES; HOT PRESSING; NITROGEN; SINTERING; STRUCTURAL CERAMICS; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL WIDTH; ENERGY LOSS NEAR EDGE STRUCTURE LINE PROFILE METHODS; HIGH ANGLE ANNULAR DARK FIELD IMAGING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

SILICON CARBIDE;

EID: 0343526969     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-6454(99)00393-6     Document Type: Article

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