Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2091-2094

  Miyoshi, M ^a,b   Ishikawa, H ^a   Egawa, T ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; HIGH ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); MAXIMUM DRAIN CURRENT; METAL-ORGANIC VAPOR PHASE EPITAXY; PEAK EXTRINSIC TRANSCONDUCTANCE; SAPPHIRE SUBSTRATES; SHEET CARRIER CONCENTRATION;

ELECTRON MOBILITY; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS;

SILICON WAFERS;

EID: 34247492446     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303445     Document Type: Conference Paper

References (11)

1. R. Gaska, J. W. Yang, A. Osinsky, Q. Chen, M. Asif Khan, A. O. Orlov, G. L. Snider, and M. S. Shur, Appl. Phys. Lett. 72, 707 (1998).
2. S. Keller, G. Parish, P. T. Fini, S. Heikman, C.-H. Chen, N. Zhang, S. P. Denbaars, and U. K. Mishra, J. Appl. Phys. 86, 5850 (1999).
3. G. Y. Zhao, H. Ishikawa, T. Egawa, T. Jimbo, and M. Umeno, Jpn. J. Appl. Phys. 39, 1035 (2000).
4. L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. R. Shealy, IEEE Trans Electron Devices 48, 479 (2001).
5. Y.-F. Wu, J. P. Ibbetson, P. Parikh, B. P. Keller, U. K. Mishra, and D. Kapolnek, IEEE Trans Electron Devices 48, 586 (2001).
6. T. Egawa, G. Y. Zhao, H. Ishikawa, M. Umeno, and T. Jimbo, IEEE Trans Electron Devices 48, 603 (2001).
7. S. Arulkumaran, M. Sakai, T. Egawa, H. Ishikawa, T. Jimbo, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka, M. Tanaka, and O. Oda, Appl. Phys. Lett. 81, 1131 (2002).
8. H. Tokunaga, I. Waki, A. Yamaguchi, N. Akutsu, and K. Matsumoto, J. Cryst. Growth 189, 519 (1998).
9. C. H. Chen, H. Liu, D. Steigerwald, W. Imler, C. F. Kuo, and M. G. Craford, Mater. Res. Soc. Symp. Proc. 395, 103 (1996).
10. S. Arulkumalan, T. Egawa, H. Ishikawa, T. Jimbo, J. Vac. Sci. Technol. B 21, 888 (2003).
11. M. Kihara, T. Sasaki, T. Tsuchiya, and H. Sakaguchi, Proc. Int. Workshop on Nitride Semiconductors, Naoya, Japan, 2000, IPAP Conf. Series 1, 117 (2000).