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Applied Physics A: Materials Science and Processing

Volumn 87, Issue 4, 2007, Pages 705-708

Enhanced stability of platinized silicon substrates using an unconventional adhesion layer deposited by CSD for high temperature dielectric thin film deposition

(3) Halder, S a Schneller, T a Waser, R a,b

a RWTH AACHEN UNIVERSITY (Germany)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; CRYSTALLIZATION; DIELECTRIC FILMS; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; PERMITTIVITY; STABILITY; THIN FILMS;

PLATINIZED SILICON; STANDARD PLATINIZED SUBSTRATES; TEMPERATURE STABLE;

SILICON;

EID: 34247359010 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-007-3866-3 Document Type: Article

Times cited : (28)

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