Ultrathin SiO2-films on 4H-SiC(0 0 0 1) studied by angle-scanned photoelectron diffraction

Journal of Electron Spectroscopy and Related Phenomena

Volumn 156-158, Issue , 2007, Pages 119-123

  Schurmann M ^a   Dreiner, S ^a   Berges, U ^a   Westphal, C ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

Author keywords

Photoelectron diffraction; Semiconductor surfaces and interfaces; Silicon carbide; XPD

Indexed keywords

ANGLE MEASUREMENT; ELECTRON DIFFRACTION; FILM GROWTH; PHOTOEMISSION; SILICA; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOELECTRON DIFFRACTION; SEMICONDUCTOR INTERFACES; SEMICONDUCTOR SURFACES;

ULTRATHIN FILMS;

EID: 34247333445     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2006.12.041     Document Type: Article

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