Atomistic simulation of the size and orientation dependences of thermal conductivity in GaN nanowires

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Wang, Zhiguo ^a   Zu, Xiaotao ^a   Gao, Fei ^b   Weber, William J ^b   Crocombette, Jean Paul ^c  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^c SERVICE DE RECHERCHES DE MÉTALLURGIE PHYSIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATION; AXIAL ORIENTATION; DIAMETER; SURFACE SCATTERING;

COMPUTATIONAL METHODS; COMPUTER SIMULATION; GALLIUM NITRIDE; SINGLE CRYSTALS; SURFACE CHEMISTRY; THERMAL CONDUCTIVITY;

NANOWIRES;

EID: 34247333439     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2730747     Document Type: Article

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