Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 861-864

  Fernandez R ^a   Rodriiguez R ^a   Nafriia M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTRIC BREAKDOWN; ELECTRIC INVERTERS; SILICA; SIMULATORS; TRANSCONDUCTANCE;

CIRCUIT SIMULATORS; CONSTANT VOLTAGE STRESSES (CVS); DEVICE GEOMETRY; OXIDE BREAKDOWN;

MOSFET DEVICES;

EID: 14644418514     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.10.029     Document Type: Conference Paper

References (7)

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