Growth and structural properties of thick GaN layers obtained by sublimation sandwich method

Journal of Crystal Growth

Volumn 303, Issue 2, 2007, Pages 395-399

  Kaminski, Michal ^a   Podsiadlo, Slawomir ^a   Wozniak, Krzysztof ^b   Dobrzycki, Lukasz ^b   Jakiela, Rafal ^c,d   Barcz, Adam ^c,d   Psoda, Marek ^a   Mizera, Jaroslaw ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

^d ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

A1. Characterization; A3. Buffer layer; A3. Sublimation method; B1. GaN

Indexed keywords

CRYSTALLIZATION; FILM GROWTH; GROWTH RATE; SAPPHIRE; SYNTHESIS (CHEMICAL); THIN FILMS;

BUFFER LAYER; ROCKING CURVE; SUBLIMATION SANDWICH METHOD (SSM); THICK LAYERS;

GALLIUM NITRIDE;

EID: 34247271434     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.338     Document Type: Article

References (33)

1. Nakamura S. J. Crystal Growth 170 (1997) 11
2. Tinjod F., et al. J. Crystal Growth 285 (2005) 450
3. Podsiadło S., Szyszko T., Gebicki W., Gosk J., Bacewicz R., Dobrzycki L., Wozniak K., Zajac M., and Twardowski A. Chem. Mater. 15 (2003) 4533
4. Szyszko T., Kamiński M., Podsiadło S., Woźniak K., Dobrzycki Ł., and Ge{ogonek}bicki W. J. Crystal Growth 276 (2005) 419
5. Ohno H. Science 291 (2001) 840
6. Grzegory I., Bockowski M., Lucznik B., Krukowski S., Romanowski Z., Wroblewski M., and Porowski S. J. Crystal Growth 246 (2002) 177
7. Kamler G., Zachara J., Podsiadlo S., Adamowicz L., and Gebicki W. J. Crystal Growth 212 (2000) 39
8. Song Y., Wang W., Yuan W., Wu X., and Chen X. J. Crystal Growth 247 (2003) 275
9. Hermann M., Gogova D., Siche D., Schmidbauer M., Monemar B., Stutzmann M., and Eickhoff M. J. Crystal Growth 293 (2006) 462
10. Stach E.A., Kelsch M., Nelson E.C., Wong W.S., Sands T., and Cheung N.W. Appl. Phys. Lett. 77 (2000) 1819
11. Shi Y., Xie Z.Y., Liu L., Liu B., Edgar J.H., and Kuball M. J. Crystal Growth 233 (2001) 177
12. Segal A.S., Karpov S.Yu., Makarov Yu.N., Mokhov E.N., Roenkov A.D., Ramm M.G., and Vodakov Yu.A. J. Crystal Growth 211 (2000) 68
13. Mokhov E.N., Ramm M.G., Roenkov A.D., and Vodakov Y.A. Mater. Sci. Eng. B B46 (1997) 317
14. Segal A.S., Vorob'ev A.N., Karpov S.Yu., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Vodakov Yu.A., and Makarov Yu.N. J. Crystal Growth 208 (2000) 431
15. Baranov P.G., et al. J. Nitride Semicond. Res. 3 (1998) 50
16. Vodakov Yu.A., Mokhov E.N., Roenkov A.D., Boiko M.E., and Baranov P.G. J. Crystal Growth 183 (1998) 10
17. CrysAlis RED, Oxford Diffraction Ltd., Version 1.171.28cycle2 beta (release 25-10-2005 CrysAlis171 .NET) (compiled Oct 25 2005,08:50:05) Analytical numeric absorption correction using a multifaceted crystal model based on expressions derived by R.C. Clark and J.S. Reid.
18. CrysAlis CCD, Oxford Diffraction Ltd., Version 1.171.28cycle2 beta; CrysAlis RED, Oxford Diffraction Ltd., Version 1.171.28cycle2 beta.
19. Sheldrick G.M. Acta Crystallogr. A 46 (1990) 467
20. G.M. Sheldrick, SHELXL93. Program for the Refinement of Crystal Structures, University of Göttingen, Germany.
21. In: Wilson A.J.C. (Ed). International Tables for Crystallography vol. C (1992), Kluwer, Dordrecht
22. Juza R., and Hahn H. Zeitschrift fuer Anorganische und Allgemeine Chemie 239 (1938) 282
23. Schulz H., and Thiemann K.H. Solid State Commun. 23 (1997) 815
24. Miwa K., and Fukumoto A. Phys. Rev. Ser. 3 B 48 (1993) 7897
25. Xu Y.N., and Ching W.Y. Phys. Rev. Serie 3, B: Condens. Matter 48 (1993) 4335
26. Xu Y.N., and Ching W.Y. Phys. Rev. Ser. 3 B 10 (1974) 676
27. Wright A.F., and Nelson J.S. Phys. Rev. Ser. 3 B 51 (1995) 7866
28. Christensen N.E., and Gorczyca I. Phys. Rev. Ser. 3 B 50 (1994) 4397
29. Wright A.F., and Nelson J.S. Phys. Rev. Ser. 3 B 50 (1994) 2159
30. Paszkowicz W., Podsiadlo S., and Minikayev R. J. Alloys Compds. 382 (2004) 100
31. Yeh C., et al. Phys. Rev. Ser. 3 B 46 16 (1992) 10086
32. Chen X.-L., et al. Chin. Phys. Lett. 16 2 (1999) 107
33. Chen X.-L., et al. Mod. Phys. Lett. B 13 9 (1999) 285