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Volumn 208, Issue 1, 2000, Pages 431-441

Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DIFFUSION IN SOLIDS; INERT GASES; MASS TRANSFER; SILICON CARBIDE; SUBLIMATION; THERMAL EFFECTS;

EID: 0033896864     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00418-2     Document Type: Article
Times cited : (32)

References (13)
  • 5
    • 85031588189 scopus 로고    scopus 로고
    • Pat. USSR N403275 (1970), Pat. G.B. N1458445 (21.02.74), Pat. USA N4147575 (03.04.79)
    • Yu.A. Vodakov, E.N. Mokhov, Pat. USSR N403275 (1970), Pat. G.B. N1458445 (21.02.74), Pat. USA N4147575 (03.04.79).
    • Vodakov, Yu.A.1    Mokhov, E.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.