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Volumn 208, Issue 1, 2000, Pages 431-441
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Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas
a a b c c c c c d |
Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
DIFFUSION IN SOLIDS;
INERT GASES;
MASS TRANSFER;
SILICON CARBIDE;
SUBLIMATION;
THERMAL EFFECTS;
DIFFUSION MASS TRANSPORT;
SUBLIMATION SANDWICH METHOD;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0033896864
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00418-2 Document Type: Article |
Times cited : (32)
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References (13)
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