Room temperature photoluminescence mechanism of SiOx film after annealing at different temperatures

Journal of Luminescence

Volumn 126, Issue 1, 2007, Pages 145-148

  Fang, Y C ^a,b   Zhang, Z J ^c   Lu, M ^c  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c FUDAN UNIVERSITY   (China)

Author keywords

Annealing; Defects; Nanocrystal silicon; Photoluminescence

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; EVAPORATION; NANOCRYSTALLINE SILICON; PHOTOLUMINESCENCE; RAMAN SCATTERING; SILICON COMPOUNDS; X RAY DIFFRACTION;

ANNEALING TEMPERATURE; NANOCRYSTAL SILICON; ROOM TEMPERATURE (RT);

OXIDE FILMS;

EID: 34247265957     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.06.018     Document Type: Article

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