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Volumn 2006, Issue , 2006, Pages 274-279

A novel power optimization technique for ultra-low power RFICs

Author keywords

CMOS; Low noise amplifier; Radio frequency integrated circuit; Ultra low power

Indexed keywords

ELECTRIC LOADS; ENERGY DISSIPATION; GAIN MEASUREMENT; MOS CAPACITORS;

EID: 34247241022     PISSN: 15334678     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1165573.1165639     Document Type: Conference Paper
Times cited : (42)

References (13)
  • 1
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    • Sep
    • D Based Methodology for the Design of CMOS Analog Circuits and Its Application to the Synthesis of a Silicon-on-Insulator Micropower OTA," IEEE J. of Solid-State Circuits, vol. 31, no. 9, pp. 1314-1319, Sep. 1996.
    • (1996) IEEE J. of Solid-State Circuits , vol.31 , Issue.9 , pp. 1314-1319
    • Silveira, F.1    Flandre, D.2    Jespers, P.G.A.3
  • 2
    • 4544246902 scopus 로고    scopus 로고
    • Using the Weak Inversion Region to Optimize Input Stage Design of CMOS Op Amps
    • Jan
    • D. J. Comer, D. T. Comer, "Using the Weak Inversion Region to Optimize Input Stage Design of CMOS Op Amps," IEEE Trans. on Circuit and Systems-II, vol. 51, no. 1, pp. 8-14, Jan. 2004.
    • (2004) IEEE Trans. on Circuit and Systems-II , vol.51 , Issue.1 , pp. 8-14
    • Comer, D.J.1    Comer, D.T.2
  • 5
    • 29244431687 scopus 로고    scopus 로고
    • A New and Improved Physics-Based Model for MOS Transistors
    • Dec
    • J. R. Hauser, "A New and Improved Physics-Based Model for MOS Transistors," IEEE Trans. on Electron Devices, vol. 52, no. 12, pp. 2640-2647, Dec. 2005.
    • (2005) IEEE Trans. on Electron Devices , vol.52 , Issue.12 , pp. 2640-2647
    • Hauser, J.R.1
  • 7
    • 0033879027 scopus 로고    scopus 로고
    • C. C. Enz, Y. Cheng, MOS Transistor Modeling for RF IC Design, IEEE J. Solid-State Circuits, pp. 186-201, 35, no. 2, pp. 186-201, Feb. 2000.
    • C. C. Enz, Y. Cheng, "MOS Transistor Modeling for RF IC Design," IEEE J. Solid-State Circuits, pp. 186-201, vol. 35, no. 2, pp. 186-201, Feb. 2000.
  • 9
    • 0038483182 scopus 로고    scopus 로고
    • An MOS Transistor Model for RF IC Design Valid in All Regions of Operation
    • Jan
    • C. C. Enz, "An MOS Transistor Model for RF IC Design Valid in All Regions of Operation," IEEE Trans. Microwave Theory and Techniques, vol. 50, no. 1, pp. 342-359, Jan. 2002.
    • (2002) IEEE Trans. Microwave Theory and Techniques , vol.50 , Issue.1 , pp. 342-359
    • Enz, C.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.