Simple and accurate extraction methodology for RF MOSFET valid up to 20 GHz

IEE Proceedings: Circuits, Devices and Systems

Volumn 151, Issue 6, 2004, Pages 587-592

  Tong, A F ^a   Yeo, K S ^b   Jia, L ^b   Geng, C Q ^a   Ma, J G ^b   Do, M A ^b  

^a Advanced RFIC S Pte Ltd   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; OPTIMIZATION; REGRESSION ANALYSIS;

LINEAR REGRESSION; PARAMETER EXTRACTION; SUBMICRON MOSFET; TRANSCAPACITANCE;

MOSFET DEVICES;

EID: 13244267015     PISSN: 13502409     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-cds:20040778     Document Type: Article

References (13)

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