A new and improved physics-based model for MOS transistors

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2640-2647

  Hauser, John R ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Field effect transistors (FETs); MIS devices; Modeling; MOSFETs; Semiconductor device modeling

Indexed keywords

DIFFERENTIAL EQUATIONS; ELECTRIC NETWORK ANALYSIS; INTEGRATION; MATHEMATICAL MODELS; MIS DEVICES; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS;

FIRST-ORDER MODEL; LATERAL DRAIN FIELD; MOS SURFACE MOBILITY; SURFACE FIELD;

FIELD EFFECT TRANSISTORS;

EID: 29244431687     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859623     Document Type: Article

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